Search results for " Solar cells"
showing 10 items of 131 documents
Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters
2017
The ideal diode equation is regularly used to describe the $\textit {JV}$ -characteristic of single junction solar cells. The connection between the diode equation and fundamental physics is the application of the Boltzmann approximation to describe the fluxes of photons emitted by the cell. In this paper, this approximation is used to derive analytic $\textit {JV}$ -characteristics for three photovoltaic high-efficiency concepts, intermediate band solar cells, and solar cells optically coupled to up and downconverters. These three concepts share the common feature that they allow excitation of electrons between at least three energy levels, which assures a better utilization of the solar s…
A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules
2019
Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…
Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
2012
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.
An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules
2020
Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…
Amorphous Silicon Nanotubes via Galvanic Displacement Deposition
2013
Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 μm and wall thickness of 38 nm.The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of ~1.6 eV. Keywords: Silicon nanotubes, …
Single-Exciton Amplified Spontaneous Emission in Thin Films of CsPbX3 (X = Br, I) Perovskite Nanocrystals
2019
CsPbX3 perovskite nanocrystals (PNCs) have emerged as an excellent material for stimulated emission purposes, with even more prospective applications than conventional colloidal quantum dots. However, a better understanding of the physical mechanisms responsible for amplified spontaneous emission (ASE) is required to achieve more ambitious targets (lasing under continuous wave optical or electrical excitation). Here, we establish the intrinsic mechanisms underlying ASE in PNCs of three different band gaps (CsPbBr3, CsPbBr1.5I1.5, and CsPbI3). Our characterization at cryogenic temperatures does not reveal any evidence of the biexciton mechanism in the formation of ASE. Instead, the measured …
GROWTH AND PHOTOELECTROCHEMICAL BEHAVIOUR OF ELECTRODEPOSITED ZnO THIN FILMS FOR SOLAR CELLS
2012
Thin zinc oxide films were deposited potentiostatically from zinc nitrate aqueous solutions on ITO substrates. The influence of experimental parameters (temperature, electrolyte concentration, deposition potential) on structure and morphology of films was investigated. Deposited films were generally polycrystalline in structure, even if growth according to preferential planes occurs in certain conditions. The effect of thermal treatments in air at 150 and 350 °C was also studied. In some cases, Cl species were incorporated into deposit by adding zinc chloride to the electrolyte. A photoelectrochemical investigation, performed in neutral solution before and after thermal treatment, gives mor…
A theoretical investigation on the Cd doping of Cu-depleted CuInSe<inf>2</inf> materials
2011
Because of their outstanding characteristics and affordable price, polycrystalline thin film solar cells based on CuIn 1−x Ga x Se 2 (CIGS) absorber layer have emerged to be one of the most promising materials for photovoltaic applications [1–2]. To further enhance the efficiency of these solar cells much effort is spent on the in-depth investigation of the production methods. However, the effect of structural defects and dopants upon the macroscopic properties and morphology of epitaxially grown CIGS films is not yet fully understood [3]. More importantly, it is well established that the best cells can be prepared by growing the CIGS absorber layer under Cu-poor conditions [4]. Thus, it is…
Benefits of a translucent building envelope made of DSC-integrated glass blocks
2015
The aim of this paper is to analyse the benefits deriving from the replacement of the glazed façades of an office building located in Palermo (Sicily) with a new translucent BIPV envelope made of multifunctional glass block panels integrated with Dye-sensitized Solar Cells (DSCs). The analysed 11-storey building is cladded by a curtain wall determining high management costs, especially during summer, in order to maintain indoor comfort. After the design of the building envelope and of the components for the connection of the glass block panels with existing load bearing structure, the energy performance of the building, before and after the replacement of its envelope, were analysed with th…
Electrochemical deposition of CZTS thin films on flexible substrate
2014
Abstract In this work, we report some preliminary results concerning the fabrication of quaternary semiconductor Cu2ZnSnS4 (CZTS) thin films on a flexible substrate through the simultaneous electrodeposition of elements having different standard electrochemical potentials. CZTS thin films were obtained by potentiostatic deposition from aqueous baths at room temperature and under N2 atmosphere, varying bath composition. Chemical composition and structure of the electrodeposited films were evaluated by EDS, SEM, RAMAN and XRD. Preliminary results on the photoelectrochemical behaviour of the films will be also presented.